Электрические свойства анизотипных гетеропереходов n-ТiО2:Mn/p-CdTe

• Datum: 2013
• Hauptverfasser: Mostovyi, A. I., Brus, V. V., Maryanchuk, P. D., Ulyanitskii, K. S.
• Format: Artikel
• Sprache: Ukrainian
• Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2013
• Schlagworte: гетеропереход; тонкая пленка; легирование; TiO2; CdTe
• Online Zugang: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.1.45
• Назва журналу: Technology and design in electronic equipment

The authors have investigated electronic properties of n-TiO2:Mn/p-CdTe anisotype heterojunctions, produced by the method of electron-beam evaporation of TiO2:Mn film on single-crystal CdTe substrates in vacuum. The dominant mechanism of charge transport in the forward and reverse bias has been esta...