Характеристики фотодиодов со структурой «собственный оксид – InSe», облученных высокоэнергетическими электронами
The article describes the research of the influence of electrons with an effective energy of 12 MeV in the 0,33–33 Mrad dose range on the electrical and photovoltaic properties of photodiodes with «intrinsic oxide — p-InSe» structure. It has been found that the minimum dose improves their basic para...
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| Datum: | 2012 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2012
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.6.29 |
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| Назва журналу: | Technology and design in electronic equipment |