Гетеропереходы, сформированные отжигом слоистых кристаллов GaSe и InSe в парах цинка

• Date: 2012
• Main Authors: Kudrynskyi, Z. R., Kovalyuk, Z. D.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2012
• Subjects: слоистые кристаллы; гетеропереходы; отжиг; спектральные характеристики; вольт-фарадные характеристики
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA.2012.6.40
• Journal Title: Technology and design in electronic equipment

The article presents a method of creating heterojunc¬tions based on semiconductors with different lattice types. Substrates manufactured from GaSe and InSe layered crystals were annealed in Zn vapor. This way, n-ZnSe–p-GaSe and n-ZnSe–p-InSe heterojunctions were obtained. The obtained heterojunction...