Стимулируемая водородом миграция атомов металлов в структурах «металл — полупроводник»
The article presents experimental results of the effect atomic hydrogen has on the Cu—Ge and Ni—Ge structures. It has been shown experimentally that the treatment of structures at room temperature is accompanied by the introduction of metal atoms with an abnormally high concentration in the surface...
Збережено в:
| Дата: | 2012 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | Ukrainian |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2012
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.6.44 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The article presents experimental results of the effect atomic hydrogen has on the Cu—Ge and Ni—Ge structures. It has been shown experimentally that the treatment of structures at room temperature is accompanied by the introduction of metal atoms with an abnormally high concentration in the surface layers of thickness up to 1 mm. |
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