Фотоэлектрические свойства гетеропереходов n-SiC/n-Si

• Datum: 2012
• Hauptverfasser: Semenov, A. V., Kozlovskii, А. А., Puzikov, V. M.
• Format: Artikel
• Sprache: Ukrainian
• Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2012
• Schlagworte: карбид кремния; фотовольтаический эффект; гетеропереход
• Online Zugang: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.5.27
• Назва журналу: Technology and design in electronic equipment

Photovoltaic effect in isotype heterotructure formed by nanocrystalline silicon carbide films on single crystal n-Si substrates (n-SiC/n-Si heterojunction) was studied. The films were produced by direct ionic deposition method. The model that takes into account the quantum wells and potential barrie...