Исследование качества пайки кристаллов мощных транзисторов релаксационным импеданс-спектрометром
Differential distribution profiles of the thermal «junction-to-case» resistance of KP723G transistors in accordance with the attachment of the crystals into the package have been investigated. Spectra of thermal resistances were calculated from the analysis of the temporal dependence of the dynamic...
Збережено в:
| Дата: | 2012 |
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| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | Ukrainian |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2012
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.5.44 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | Differential distribution profiles of the thermal «junction-to-case» resistance of KP723G transistors in accordance with the attachment of the crystals into the package have been investigated. Spectra of thermal resistances were calculated from the analysis of the temporal dependence of the dynamic thermal impedance obtained by a new non-destructive method of differential spectroscopy. The dependence of internal thermal resistance of transistor structure components on the thermal relaxation time constant is presented. |
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