Исследование температурной зависимости контактного сопротивления омических контактов к InP

• Date: 2012
• Main Author: Novitskyi, S. V.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2012
• Subjects: фосфид индия; омический контакт; дислокации; удельное контактное сопротивление
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.4.32
• Journal Title: Technology and design in electronic equipment

It is experimentally confirmed that the temperature dependence of specific contact resistance of ohmic contacts Au–TiB2–Ge–Au–n–n+–n++-InP is described with the current transport model with a high density of dislocations in the contact region of the semiconductor. The samples used in the experiment...