Исследование температурной зависимости контактного сопротивления омических контактов к InP
It is experimentally confirmed that the temperature dependence of specific contact resistance of ohmic contacts Au–TiB2–Ge–Au–n–n+–n++-InP is described with the current transport model with a high density of dislocations in the contact region of the semiconductor. The samples used in the experiment...
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| Date: | 2012 |
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| Main Author: | |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2012
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.4.32 |
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| Journal Title: | Technology and design in electronic equipment |