Температурные поля в растущем кристалле «солнечного кремния»
The optimal thermal terms for growing by Czochralski method Si single-crystals, suitable for making photoelectric energy converters, has been defined by the computer simulation method. Dependences of temperature fields character and crystallization front form on the diameter of the crystal, stage an...
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| Datum: | 2012 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2012
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.3.21 |
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| Назва журналу: | Technology and design in electronic equipment |