Фотолюминесцентный метод исследования пластической деформации на границе раз­де­ла «SiO2–Si»

Фотолюминесцентный метод исследования пластической деформации на границе раз­де­ла «SiO2–Si»

The possibility of using the photoluminescence method for studying the mechanisms of plastic deformation at the boundary of "SiO2 — Si" in the process of obtaining nanostructured silicon layers by deformation.

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Bibliographic Details
Date:2012
Main Authors: Kulinich, О. А., Yatsunskiy, I. P., Eshtokina, T. Yu., Brusenskaya, G. I., Marchuk, I. A.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2012
Subjects:
фотолюминесценция
пластическая деформация
дефекты
дислокации
напряжения
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.2.47
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:The possibility of using the photoluminescence method for studying the mechanisms of plastic deformation at the boundary of "SiO2 — Si" in the process of obtaining nanostructured silicon layers by deformation.

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