Модель алмазного транзистора
In this work is shown that fluent shutter model it is enough well describes work field-effect diamond RF-transistors. Using this model, possible to calculate transistor parameters used electronic parameters of the diamond structure with δ-doped (hydrogen or boron) layer and geometric parameter trans...
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| Date: | 2011 |
|---|---|
| Main Authors: | , , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2011
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.6.13 |
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| Journal Title: | Technology and design in electronic equipment |