Исследование допустимой импульсной мощности кремниевой p+–p–n+-структуры
The conducted researches of the thermal parameters of the silicon p+–p–n+-structure under the influence of the pulse signal have shown that the structure thermal resistance decreases in proportion to the decrease in the thickness of the base region and the dependence of the superheating tem...
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| Date: | 2011 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2011
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.6.43 |
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| Journal Title: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Summary: | The conducted researches of the thermal parameters of the silicon p+–p–n+-structure under the influence of the pulse signal have shown that the structure thermal resistance decreases in proportion to the decrease in the thickness of the base region and the dependence of the superheating temperature of the pulsed power is close to exponential, which increases the withstanding capacity. A decrease in the thickness of the base region from 500 to 250 microns for a given temperature overheating can improve power handling diode p+–p–n+-structure by 30%. |
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