Формирование дельта-легированного водородом p-слоя в природных и CVD-кристаллах алмаза
A method is proposed for the hydrogen heat treatment of natural and CVD-diamond crystals, which can serve as an alternative to conventional method of forming H-layer in microwave plasma of hydrogen as a simpler one and more reproducible. The boundaries of thermal stability of hydrogenated diamond su...
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| Date: | 2011 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2011
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.5.14 |
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| Journal Title: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Summary: | A method is proposed for the hydrogen heat treatment of natural and CVD-diamond crystals, which can serve as an alternative to conventional method of forming H-layer in microwave plasma of hydrogen as a simpler one and more reproducible. The boundaries of thermal stability of hydrogenated diamond surface are determined. It is shown that aluminum deposited on hydrogenated during the hydrogen heat treatment diamond surface can serve as a Schottky gate in microwave field-effect transistor made with MESFET technology. |
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