Исследование спектров фотолюминесценции низкоразмерных структур InSb, сформированных в матрице GaSb
Results of investigation of photoluminescence spectrums of the epitaxial structures containing InSb low-dimensional structures formed in GaSb matrix by a method of pulse cooling of saturated solution-melt are presented. It is shown, that observable photoluminescence bands are concerned with radiatio...
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| Datum: | 2011 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2011
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.5.35 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | Results of investigation of photoluminescence spectrums of the epitaxial structures containing InSb low-dimensional structures formed in GaSb matrix by a method of pulse cooling of saturated solution-melt are presented. It is shown, that observable photoluminescence bands are concerned with radiation transitions through energy levels of InSb low-dimensional structures formed on InSb wetting layer with thickness of 2 nm. |
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