Новый подход к созданию устройств с энергонезависимой памятью на основе Si-МОП-транзисторов

• Date: 2011
• Main Authors: Gulyaev, Yu. V., Zhdan, A. G., Chucheva, G. V.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2011
• Subjects: Si-МОП-транзисторы; электронно-ионное взаимодействие; энергонезависимая память; нейтральные ассоциаты (ион электрон)
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.3.03
• Journal Title: Technology and design in electronic equipment

A new approach to the creation of a long-term random-access memory based on the effect of the electron-ion interaction on Si-MOS-transistors is proposed. The difference in levels of signals «zero» and «unit» depends on the regime of reading, and can vary widely. Time of recording-erasing is determin...