Кремниевый p–i–n-фотодиод с малым темновым током
The influence of circular metallization of the reverse side of p–i–n-photodiode crystal based on highly ohm silicon on it’s characteristics are explored. The dark current can be decreased by an order, at the same time losses of current monochromatic sensitiveness on a wave-length 1,06 mkm d...
Збережено в:
| Дата: | 2011 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | Ukrainian |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2011
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.3.27 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The influence of circular metallization of the reverse side of p–i–n-photodiode crystal based on highly ohm silicon on it’s characteristics are explored. The dark current can be decreased by an order, at the same time losses of current monochromatic sensitiveness on a wave-length 1,06 mkm do not exceed 15%. The characteristics of the offered photodiode show that it can be recommended as base construction at serial product designing. |
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