Кремниевый p–i–n-фотодиод с малым темновым током

• Datum: 2011
• Hauptverfasser: Dobrovolskiy, Yu. G., Ashcheulov, A. A.
• Format: Artikel
• Sprache: Ukrainisch
• Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2011
• Schlagworte: p–i–n-фотодиод; чувствительность; темновой ток
• Online Zugang: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.3.27
• Назва журналу: Technology and design in electronic equipment

The influence of circular metallization of the reverse side of p–i–n-photodiode crystal based on highly ohm silicon on it’s characteristics are explored. The dark current can be decreased by an order, at the same time losses of current monochromatic sensitiveness on a wave-length 1,06 mkm d...