Радиационная стойкость нитевидных кристаллов SiGe, используемых для сенсоров физических величин
An influence of g-irradiation (Co60) with doze up to 1—1018 сm–2 and magnetic field with induction up to 14 T on conduction of 1–xGex (х = 0,03) whisker crystals with resistivity of 0,08—0,025 Оhm·сm in temperature range 4,2—300 K have been studi...
Збережено в:
| Дата: | 2011 |
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| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | Ukrainian |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2011
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.1-2.10 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | An influence of g-irradiation (Co60) with doze up to 1—1018 сm–2 and magnetic field with induction up to 14 T on conduction of 1–xGex (х = 0,03) whisker crystals with resistivity of 0,08—0,025 Оhm·сm in temperature range 4,2—300 K have been studied. It is shown that whisker crystals resistance faintly varies under irradiation with doze 2·1017 сm–2, while their magnetoresistance substantially changes. The strain sensors stable to irradiation action operating in high magnetic fields on the base of the whiskers have been designed. |
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