Радиационная стойкость нитевидных кристаллов SiGe, используемых для сенсоров фи­зи­чес­ких величин

An influence of g-irradiation (Co60) with doze up to 1—1018 сm–2 and magnetic field with induction up to 14 T on conduction of 1–xGex (х = 0,03) whisker crystals with resistivity of 0,08—0,025 Оhm·сm in temperature range 4,2—300 K have been studi...

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Bibliographische Detailangaben
Datum:2011
Hauptverfasser: Druzhinin, A. A., Ostrovskiy, I. P., Khoverko, Yu. N., Litovchenko, P. G., Pavlovska, N. T., Pavlovskiy, Yu. V., Tsmots, V. M., Povarchuk, V. Yu.
Format: Artikel
Sprache:Ukrainian
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2011
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Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.1-2.10
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Zusammenfassung:An influence of g-irradiation (Co60) with doze up to 1—1018 сm–2 and magnetic field with induction up to 14 T on conduction of 1–xGex (х = 0,03) whisker crystals with resistivity of 0,08—0,025 Оhm·сm in temperature range 4,2—300 K have been studied. It is shown that whisker crystals resistance faintly varies under irradiation with doze 2·1017 сm–2, while their magnetoresistance substantially changes. The strain sensors stable to irradiation action operating in high magnetic fields on the base of the whiskers have been designed.