Роль пластической деформации в получении нанокремния
The quantity and quality analysis of plastic deformation and near-surface silicon layers with nanostructure silicon formation are given in this paper. It is shown, due to high-temperature oxidation and other factors the complex defect structure is generated in near-surface silicon layers. It consist...
Збережено в:
| Дата: | 2011 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Ukrainian |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2011
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.1-2.22 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The quantity and quality analysis of plastic deformation and near-surface silicon layers with nanostructure silicon formation are given in this paper. It is shown, due to high-temperature oxidation and other factors the complex defect structure is generated in near-surface silicon layers. It consists of a disordered silicon layer and a layer of dislocation networks. Silicon dioxide etching and additional chemical treatment allows obtaining nanostructured silicon with given properties. |
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