Диоды Ганна из InP с катодным контактом, инжектирующим горячие электроны. Ч. 1. Межфазные взаимодействия в катодных контактах

Диоды Ганна из InP с катодным контактом, инжектирующим горячие электроны. Ч. 1. Межфазные взаимодействия в катодных контактах

The article presents the research on interactions between phases in the Ge–Au, Ge–TiBx and Au–TiBxAu contacts to n–n+–n++-InP, both before and after rapid thermal annealing, and also the output parameters of Gunn diodes based on the InP structure with Au–TiBx–Au–Ge contact metallization in...

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Bibliographic Details
Date:2010
Main Authors: Boltovets, N. S., Ivanov, V. N., Kovtonyuk, V. M., Rayevskaya, N. S., Belyaev, A. E., Bobyl, A. V., Konakova, R. V., Kudryk, Ya. Ya., Milenin, V. V., Novitskiy, C. V., Sheremet, V. N.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2010
Subjects:
катодный контакт
фосфид индия
диод Ганна
омический контакт
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.5-6.03
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:The article presents the research on interactions between phases in the Ge–Au, Ge–TiBx and Au–TiBxAu contacts to n–n+–n++-InP, both before and after rapid thermal annealing, and also the output parameters of Gunn diodes based on the InP structure with Au–TiBx–Au–Ge contact metallization in the –40...+60 °С temperature range. It is shown that ohmic contacts to InP layer are formed as a result of diffusion of Ge and Au atoms deep inside the layer. The output parameters of Gunn diodes with Au–TiBx–Au–Ge cathode contacts agree with the data obtained for InP Gunn diodes made with the use of more complicated technology.

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