Датчики интегральной поглощенной дозы ионизирующего излучения на основе МОП-транзисторов

Датчики интегральной поглощенной дозы ионизирующего излучения на основе МОП-транзисторов

The requirements to technology and design of p-channel and n-channel MOS transistors with a thick oxide layer designed for use in the capacity of integral dosimeters of absorbed dose of ionizing radiation are defined. The technology of radiation-sensitive MOS transistors with a thick oxide in the p-...

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Bibliographic Details
Date:2010
Main Author: Perevertaylo, V. L.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2010
Subjects:
МОП-дозиметр
технология р-
n-МОП-транзистора
пороговое напряжение
толстый слой оксида
радиационная чувствительность
пассивный режим
дозовая зависимость
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.5-6.22
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:The requirements to technology and design of p-channel and n-channel MOS transistors with a thick oxide layer designed for use in the capacity of integral dosimeters of absorbed dose of ionizing radiation are defined. The technology of radiation-sensitive MOS transistors with a thick oxide in the p-channel and n-channel version is created.

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