Электрические и топологические свойства пленок оксидов, термически выращенных на подложках InSe
The surface resistance dynamics of oxides grown thermally on InSe substrates in two crystallography planes is obtained. It is determined that resistance changes considerably only during the first 5 minutes of the oxidization period. The increase of an oxidization duration does not influence on its v...
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| Datum: | 2010 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2010
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.5-6.51 |
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| Назва журналу: | Technology and design in electronic equipment |