Электрические и топологические свойства пленок оксидов, термически выращенных на подложках InSe

The surface resistance dynamics of oxides grown thermally on InSe substrates in two crystallography planes is obtained. It is determined that resistance changes considerably only during the first 5 minutes of the oxidization period. The increase of an oxidization duration does not influence on its v...

Full description

Saved in:
Bibliographic Details
Date:2010
Main Authors: Katerynchuk, V. M., Kovaluk, Z. D., Khomiak, V. V.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2010
Subjects:
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.5-6.51
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Technology and design in electronic equipment

Institution

Technology and design in electronic equipment