Свойства металлических контактов на пленках TiO2, изготовленных методом реактивного магнетронного распыления
The properties of recrystallized polysilicon on insulator layers of p-type conductive SOI-structures with different carrier concentration irradiated with high-energy electrons flow about 1017 сm–2 in temperature range 4,2–300 К and high magnetic fields were investigated. It was found that h...
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| Datum: | 2010 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2010
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| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.5-6.63 |
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| Назва журналу: | Technology and design in electronic equipment |