Тепловизор на основе матричного фотоприемного устройства из 128×128 CdHgTe-фо­то­дио­дов

Тепловизор на основе матричного фотоприемного устройства из 128×128 CdHgTe-фо­то­дио­дов

The results of investigation of developed thermal imager for middle (3—5 µm) infrared region are presented and its applications features are discussed. The thermal imager consists of cooled to 80 K 128×128 diodes focal plane array on the base of cadmium–mercury–telluride compound and cryostat with t...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2010
Автори: Reva, V. P., Golenkov, A. G., Zabudskiy, V. V., Korinets, S. V., Tsybriy, Z. F., Gumenjuk-Sichevska, J. V., Bunchuk, S. G., Apatskaya, M. V., Lysiuk, I. А., Smoliy, М. I.
Формат: Стаття
Мова:Ukrainian
Опубліковано: PE "Politekhperiodika", Book and Journal Publishers 2010
Теми:
тепловизионный приемник
инфракрасная область
кадмий–ртуть–теллур
Онлайн доступ:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.4.24
Теги: Додати тег
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Резюме:The results of investigation of developed thermal imager for middle (3—5 µm) infrared region are presented and its applications features are discussed. The thermal imager consists of cooled to 80 K 128×128 diodes focal plane array on the base of cadmium–mercury–telluride compound and cryostat with temperature checking system. The photodiode array is bonded with readout device (silicon focal processor) via indium microcontacts. The measured average value of noise equivalent temperature difference was NETD= 20±4 mK (background radiation temperature T = 300 K, field of view 2θ = 180°, the cooled diaphragm was not used).

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