Модуль солнечных батарей на основе соединений А3В5 с концентраторами солнечной энергии и системой теплоотвода
Characteristics of technology of manufacturing epitaxial structures GaAs(AlGaAs)/InGaP with two active p–n-junctions for photocells which are able to work at concentrated solar radiation are considered. New suitable for industry technology of manufacturing and structure of solar batteries module bas...
Gespeichert in:
| Datum: | 2010 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2010
|
| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.2.10 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Technology and design in electronic equipment |
Institution
Technology and design in electronic equipment| Zusammenfassung: | Characteristics of technology of manufacturing epitaxial structures GaAs(AlGaAs)/InGaP with two active p–n-junctions for photocells which are able to work at concentrated solar radiation are considered. New suitable for industry technology of manufacturing and structure of solar batteries module based on epitaxial structures GaAs with Fresnel lens as concentrators of solar energy and a heat sink on the base of a heat pipe, equipped with a radiator sheet are developed. In conditions of 500-fold concentration of natural solar illumination at AM1,5 and 27,8% COE of a photocell, the electric power that is generated by the module reaches 78 W. |
|---|