Фотодиод ультрафиолетового диапазона на основе селенида цинка

• Datum: 2010
• Hauptverfasser: Perevertailo, V. L., Dobrovol’skiy, Yu. G., Popov, V. M., Pokanevich, A. P., Matskevich, V. M., Rizhikov, V. D., Shabashkevich, B. G., Yur’yev, V. G.
• Format: Artikel
• Sprache: Ukrainian
• Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2010
• Schlagworte: фотодиод Шоттки; УФ-излучение; радиометрия; дозиметрия
• Online Zugang: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.2.17
• Назва журналу: Technology and design in electronic equipment

The construction and technology of Shottky photodiode on the basis of ZnSe, sensible in the ultraviolet region of spectrum are considered. Researches of electrophysical and photo-electric descriptions of photodiodes of Shottky Nі–ZnSe(Te,O)–Іn are conducted, and it is shown, that they can be applied...