Фотодиод ультрафиолетового диапазона на основе селенида цинка
The construction and technology of Shottky photodiode on the basis of ZnSe, sensible in the ultraviolet region of spectrum are considered. Researches of electrophysical and photo-electric descriptions of photodiodes of Shottky Nі–ZnSe(Te,O)–Іn are conducted, and it is shown, that they can be applied...
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| Date: | 2010 |
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| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2010
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.2.17 |
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| Journal Title: | Technology and design in electronic equipment |
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