Эффект усиления фототока в фотодиодной структуре с прямо- и обратновключенными переходами
On the basis of experimental data of dependence of the output photocurrent on the exciting light flow intensity at wide operating voltage range there has been made an estimation of current amplification factor of two-barrier photodiode Ag-NGaAs-nGaInAs-Ag-structure. The increase in amplification fac...
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| Datum: | 2010 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2010
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.1.3 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | On the basis of experimental data of dependence of the output photocurrent on the exciting light flow intensity at wide operating voltage range there has been made an estimation of current amplification factor of two-barrier photodiode Ag-NGaAs-nGaInAs-Ag-structure. The increase in amplification factor with the voltage increase is explained by photogeneration processes in dilated space charge layer. Such structures, having amplifying property, are of interest for creating of optical signals reception devices. |
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