Ртутный микрозонд для исследования локальных электрофизических свойств полупроводниковых структур
The construction of mercury microprobe has been proposed for measurement of electrophysical characteristics of semiconductor materials and IS(MIS) structures with 5—25 micron locality. Local electrophysical properties of technological Si–SiO2 structures with thin oxides in the region of ele...
Збережено в:
| Дата: | 2010 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Ukrainian |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2010
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.1.35 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The construction of mercury microprobe has been proposed for measurement of electrophysical characteristics of semiconductor materials and IS(MIS) structures with 5—25 micron locality. Local electrophysical properties of technological Si–SiO2 structures with thin oxides in the region of electrically active defects on the silicon surface have been investigated. The influence of mechanical stresses near the edge of MIS structure electrodes on the local values of fixed charge in oxide has been shown. |
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