Многофункциональная гомопереходная арсенид-галлиевая n–p–m-струк­ту­ра

Многофункциональная гомопереходная арсенид-галлиевая n–p–m-струк­ту­ра

The brief information about created phototransistor nGaAs–рGaAs–Ag-structure are given. The processes of photogeneration of carriers in the base and in the space-charge layers of semiconductor junction as well as of metal — semiconductor junction are analysed depending on the mode of inclus...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Datum:2009
Hauptverfasser: Karimov, A. V., Yodgorova, D. M., Abdulkhaev, О. А., Giyasova, F. A., Nazarov, J. T.
Format: Artikel
Sprache:Ukrainian
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2009
Schlagworte:
эффект усиления тока
фототранзистор
база
барьер
режим модуляции
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.6.31
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
Beschreibung
Zusammenfassung:The brief information about created phototransistor nGaAs–рGaAs–Ag-structure are given. The processes of photogeneration of carriers in the base and in the space-charge layers of semiconductor junction as well as of metal — semiconductor junction are analysed depending on the mode of inclusion. It is shown the multifunctionality of offered homojunction structure that is perspective for creating the optical receiver or the optical transformer.

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