Многофункциональная гомопереходная арсенид-галлиевая n–p–m-струк­ту­ра

• Date: 2009
• Main Authors: Karimov, A. V., Yodgorova, D. M., Abdulkhaev, О. А., Giyasova, F. A., Nazarov, J. T.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2009
• Subjects: эффект усиления тока; фототранзистор; база; барьер; режим модуляции
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.6.31
• Journal Title: Technology and design in electronic equipment

The brief information about created phototransistor nGaAs–рGaAs–Ag-structure are given. The processes of photogeneration of carriers in the base and in the space-charge layers of semiconductor junction as well as of metal — semiconductor junction are analysed depending on the mode of inclus...