Влияние термического окисления на анизотропию электропроводности и фотопроводимости наноструктурированного кремния
An effect of thermal oxidation on the conductivity of porous silicon layers prepared by electrochemical etching of single-crystal silicon wafers with (110) orientation of the surface are investigated. The thermal oxidation is found to influence on the conductivity of porous silicon measured along va...
Saved in:
| Date: | 2009 |
|---|---|
| Main Authors: | , , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2009
|
| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.6.35 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Technology and design in electronic equipment |
Institution
Technology and design in electronic equipment| Summary: | An effect of thermal oxidation on the conductivity of porous silicon layers prepared by electrochemical etching of single-crystal silicon wafers with (110) orientation of the surface are investigated. The thermal oxidation is found to influence on the conductivity of porous silicon measured along various crystal directions in different ways. The obtained results are explained by the model of charge carriers transfer considering the presence of potential barriers on the boundaries of connecting silicon nanocrystals. |
|---|