Влияние термического окисления на ани­зо­тро­пию элек­тро­про­вод­нос­ти и фо­то­про­во­ди­мос­ти на­но­струк­ту­ри­ро­ван­но­го крем­ния

Влияние термического окисления на ани­зо­тро­пию элек­тро­про­вод­нос­ти и фо­то­про­во­ди­мос­ти на­но­струк­ту­ри­ро­ван­но­го крем­ния

An effect of thermal oxidation on the conductivity of porous silicon layers prepared by electrochemical etching of single-crystal silicon wafers with (110) orientation of the surface are investigated. The thermal oxidation is found to influence on the conductivity of porous silicon measured along va...

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Bibliographic Details
Date:2009
Main Authors: Forsh, P. A., Forsh, Е. А., Martyshov, M. N., Timoshenko, V. Yu., Kashkarov, P. K.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2009
Subjects:
пористый кремний
электропроводность
анизотропия
термическое окисление
потенциальные барьеры
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.6.35
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment

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https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.6.35

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