Влияние термического окисления на ани­зо­тро­пию элек­тро­про­вод­нос­ти и фо­то­про­во­ди­мос­ти на­но­струк­ту­ри­ро­ван­но­го крем­ния

• Date: 2009
• Main Authors: Forsh, P. A., Forsh, Е. А., Martyshov, M. N., Timoshenko, V. Yu., Kashkarov, P. K.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2009
• Subjects: пористый кремний; электропроводность; анизотропия; термическое окисление; потенциальные барьеры
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.6.35
• Journal Title: Technology and design in electronic equipment

An effect of thermal oxidation on the conductivity of porous silicon layers prepared by electrochemical etching of single-crystal silicon wafers with (110) orientation of the surface are investigated. The thermal oxidation is found to influence on the conductivity of porous silicon measured along va...