Адсорбционно-кинетическая модель осаждения пле­нок по­ли­крис­тал­ли­чес­ко­го крем­ния, ле­ги­ро­ван­ных фос­фо­ром в про­цес­се рос­та

Адсорбционно-кинетическая модель осаждения пле­нок по­ли­крис­тал­ли­чес­ко­го крем­ния, ле­ги­ро­ван­ных фос­фо­ром в про­цес­се рос­та

The investigation of deposition kinetics of in-situ phosphorus doped polysilicon films has been performed. The adsorptive-kinetic model of in-situ phosphorus doped polysilicon deposition has been developed. The values of heterogeneous reaction constants and constants, which describe the desorption p...

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Bibliographische Detailangaben
Datum:2009
Hauptverfasser: Nalivaiko, O. Yu., Turtsevich, A. S.
Format: Artikel
Sprache:Ukrainian
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2009
Schlagworte:
поликристаллический кремний
осаждение
адсорбционно-кинетическая модель
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.6.50
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Zusammenfassung:The investigation of deposition kinetics of in-situ phosphorus doped polysilicon films has been performed. The adsorptive-kinetic model of in-situ phosphorus doped polysilicon deposition has been developed. The values of heterogeneous reaction constants and constants, which describe the desorption process for monosilane and phosphine, have been defined. The optimal process conditions, which provide the acceptable deposition rate, thickness uniformity, high doping level and conformal step coverage, have been founded.

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