Адсорбционно-кинетическая модель осаждения пле­нок по­ли­крис­тал­ли­чес­ко­го крем­ния, ле­ги­ро­ван­ных фос­фо­ром в про­цес­се рос­та

The investigation of deposition kinetics of in-situ phosphorus doped polysilicon films has been performed. The adsorptive-kinetic model of in-situ phosphorus doped polysilicon deposition has been developed. The values of heterogeneous reaction constants and constants, which describe the desorption p...

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Bibliographische Detailangaben
Datum:2009
Hauptverfasser: Nalivaiko, O. Yu., Turtsevich, A. S.
Format: Artikel
Sprache:Ukrainian
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2009
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Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.6.50
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment