Вольт-фарадные измерения в тонкопленочных эпитаксиальных структурах GaAs
It is shown that capacitance–voltage characteristics that feature steeply dropping regions, in particular those of GaAs thin-film structures, may be measured at moderately small amplitudes of the measuring АС voltage (of the order of 100 mV) at the expense of taking measurements at two different amp...
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| Datum: | 2009 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2009
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.5.25 |
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| Назва журналу: | Technology and design in electronic equipment |