Вольт-фарадные измерения в тонкопленочных эпитаксиальных структурах GaAs

• Date: 2009
• Main Authors: Gorev, N. B., Kodzhespirova, I. F., Privalov, E. N.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2009
• Subjects: арсенид галлия; эпитаксиальная структура; барьер Шоттки; вольт-фарадная характеристика; глубокие центры захвата
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.5.25
• Journal Title: Technology and design in electronic equipment

It is shown that capacitance–voltage characteristics that feature steeply dropping regions, in particular those of GaAs thin-film structures, may be measured at moderately small amplitudes of the measuring АС voltage (of the order of 100 mV) at the expense of taking measurements at two different amp...