Корреляция параметров арсенид-галлиевых эпитаксиальных слоев и технологии их выращивания
The correlation between mobility and carriers concentration and growth’s conditions of gallium arsenic layers by liquid phase epitaxy is established. It is possible to obtain layers with required mobility and concentration of charge carriers by changing of technology parameters of growth’s process....
Saved in:
| Date: | 2009 |
|---|---|
| Main Authors: | , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2009
|
| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.5.38 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Technology and design in electronic equipment |