Формирование мезаструктур 4НSiC p–i–n-диодов методом ионно-плазменного травления

• Date: 2009
• Main Authors: Boltovets, M. S., Borisenko, A. G., Ivanov, V. N., Fedorovich, О. А., Krivutsa, V. A., Polozov, B. P.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2009
• Subjects: p–i–n-диод; карбид кремния 4НSiC; травление ионно-плазменное; травление кремния; мезаструктура; чип диода
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.5.45
• Journal Title: Technology and design in electronic equipment

The results of research and optimization of 4НSiC p–i–n-diodes mesastructures manufacturing method are presented, as well as analysis of current-voltage characteristics and switching characteristics of p–i–n-diodes in the 25—500°C temperature range.