Новий підхід до підвищення чутливості газового сенсора на основі плівок нанокристалічного карбіду кремнію
It was shown the possibility of increasing the sensitivity of a gas sensor based on nanocrystalline SiC films by using a scheme of a two-component sensing element, one of which is an n-nc-SiC film with electronic conductivity, and the second is an p-nc-SiC film with hole conductivity. It is shown th...
Gespeichert in:
| Datum: | 2021 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2021
|
| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2021.5-6.11 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Technology and design in electronic equipment |
Institution
Technology and design in electronic equipment| Zusammenfassung: | It was shown the possibility of increasing the sensitivity of a gas sensor based on nanocrystalline SiC films by using a scheme of a two-component sensing element, one of which is an n-nc-SiC film with electronic conductivity, and the second is an p-nc-SiC film with hole conductivity. It is shown that due to the opposite polarity of changes in resistance in the films under the simultaneous action of gases, the difference in relative resistance changes Δ in the n-nc-SiC and p-nc-SiC films will always be greater than in each film separately. The expediency of using a two-component sensing element of a gas sensor based on nc-SiC films with electron and hole conduction is shown. |
|---|