Мо­ди­фи­ка­ция ба­рьер­ной струк­ту­ры на ос­но­ве pAlGaInAs–nGaAs по­сле­до­ва­те­ль­но со­е­ди­нен­ны­ми по­тен­ци­а­ль­ны­ми ба­рье­ра­ми

• Дата: 2009
• Автори: Karimov, A. V., Yodgorova, D. M., Giyasova, F. A., Zoirova, L. Kh., Abdulhaev, O. A., Juraev, D. R.
• Формат: Стаття
• Мова: Ukrainian
• Опубліковано: PE "Politekhperiodika", Book and Journal Publishers 2009
• Теми: одно- и двухбазовая структура; потенциальные последовательно соединенные барьеры; гетеропереход pAlGaInAs–nGaAs; примесный слой; слой объемного заряда
• Онлайн доступ: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.4.52
• Назва журналу: Technology and design in electronic equipment

The influence of sequentially connected potential barriers on the physical processes occurring in the pAlGaInAs–nGaAs heterojunction has been investigated using single- and multi-barrier structures. It has been shown that modification of the heterojunction by creating a sequentially connected barrier to the substrate and to the heterolayer leads to the transformation of the passive parasitic part of the substrate into an active one and to its modulation from both sides, while the third barrier formed towards the heterolayer prevents carrier injection into the base region and significantly reduces the capacitance of the structure. As a result, the photosensitivity of the detector increases and its spectral range expands.