Мо­ди­фи­ка­ция ба­рьер­ной струк­ту­ры на ос­но­ве pAlGaInAs–nGaAs по­сле­до­ва­те­ль­но со­е­ди­нен­ны­ми по­тен­ци­а­ль­ны­ми ба­рье­ра­ми

• Date: 2009
• Main Authors: Karimov, A. V., Yodgorova, D. M., Giyasova, F. A., Zoirova, L. Kh., Abdulhaev, O. A., Juraev, D. R.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2009
• Subjects: одно- и двухбазовая структура; потенциальные последовательно соединенные барьеры; гетеропереход pAlGaInAs–nGaAs; примесный слой; слой объемного заряда
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.4.52
• Journal Title: Technology and design in electronic equipment

The influence of sequentially connected potential barriers on the physical processes occurring in the pAlGaInAs–nGaAs heterojunction has been investigated using single- and multi-barrier structures. It has been shown that modification of the heterojunction by creating a sequentially connected barrie...