Арсенид-галлиевые p+–n–p+-структуры с обедняемой базовой областью

• Date: 2009
• Main Authors: Karimov, A. V., Yodgorova, D. M., Abdulkhaev, O. A.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2009
• Subjects: механизм токоперенос; p GaAs–nGaAs–p GaAs-структура; модуляция; дефекты; ограничитель напряжения
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.3.28
• Journal Title: Technology and design in electronic equipment

The work experimentally demonstrates that the mechanism of current transport through p+GaAs–nGaAs–p+GaAs structure is determined by injection–tunneling and generation–recombination mechanisms. When modulating the part of the base containing defects, the injection–tunneling current predominates, whil...