Формирование МОП-транзисторов с изоляцией активных элементов окисленным пористым кремнием
Ultrathin functional layers of MOS transistors require high-quality isolation of active elements. A new method for forming epitaxial structures for silicon-on-insulator technology based on porous silicon is proposed. This makes it possible to form three types of transistors — bipolar, CMOS, and DMOS...
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| Date: | 2009 |
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| Main Authors: | , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2009
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.3.35 |
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| Journal Title: | Technology and design in electronic equipment |