Разработка сцинтилляторов на основе соединений AIIBVI для медицинского и технического радиационного приборостроения
The physico-technological problems of obtaining and the main properties of scintillation materials based on zinc selenide and other AIIBVI compounds are considered. The influence of the properties of doping impurities on the processes of formation of complex lattice defects acting as luminescence ce...
Збережено в:
| Дата: | 2009 |
|---|---|
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Ukrainian |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2009
|
| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.3.51 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The physico-technological problems of obtaining and the main properties of scintillation materials based on zinc selenide and other AIIBVI compounds are considered. The influence of the properties of doping impurities on the processes of formation of complex lattice defects acting as luminescence centers has been determined. It is shown that such property features as high light output and very low afterglow level, as well as the unique combination of scintillation and semiconductor properties, make it possible to use them in various fields of radiation instrumentation. |
|---|