Электроосаждение конформных электродов для получения туннельного перехода с вакуумным нанозазором

Electrodeposition of a copper electrode on a Si substrate is performed to obtain a large-area vacuum nanogap for thermotunneling devices. To obtain the correct geometry of such an electrode and reduce internal stress in it, cathode rotation, various protective masks, asymmetric current mode, and ele...

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Bibliographic Details
Date:2009
Main Authors: Djanghidze, L. B., Tavkhelidze, A. N., Blughidze, Yu. M., Taliashvili, Z. I.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2009
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Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.2.37
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:Electrodeposition of a copper electrode on a Si substrate is performed to obtain a large-area vacuum nanogap for thermotunneling devices. To obtain the correct geometry of such an electrode and reduce internal stress in it, cathode rotation, various protective masks, asymmetric current mode, and electrolyte temperature control and stabilization were used. Reducing the electrode diameter to 3 mm and increasing the thickness of the initial silicon plate to 2 mm makes it possible to grow an electrode with a bend of about 2.5 nm/mm. This made it possible to obtain two conformal electrodes with a nanogap of less than 5 nm on an area of 7 mm2. Such conformal electrodes can be used in devices based on electron tunneling.