Гетероструктуры, полученные методом отжига монокристаллов InSe в парах серы

• Дата: 2009
• Автори: Kovalyuk, Z. D., Kushnir, O. I., Sidor, O. M., Netyaga, V. V.
• Формат: Стаття
• Мова: Ukrainian
• Опубліковано: PE "Politekhperiodika", Book and Journal Publishers 2009
• Теми: гетероструктура; p–n-InSe; пленка InS
• Онлайн доступ: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.1.61
• Назва журналу: Technology and design in electronic equipment

It has been established that during prolonged (120 h) thermal treatment of InSe single crystals in sulfur vapors, an InS/InSe heterostructure is formed. The investigated electrical and photoelectrical characteristics of the obtained structures demonstrated a significant superiority of the anisotype...