Гетероструктуры, полученные методом отжига монокристаллов InSe в парах серы
It has been established that during prolonged (120 h) thermal treatment of InSe single crystals in sulfur vapors, an InS/InSe heterostructure is formed. The investigated electrical and photoelectrical characteristics of the obtained structures demonstrated a significant superiority of the anisotype...
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| Date: | 2009 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2009
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.1.61 |
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| Journal Title: | Technology and design in electronic equipment |