Гетероструктуры, полученные методом отжига монокристаллов InSe в парах серы

• Date: 2009
• Main Authors: Kovalyuk, Z. D., Kushnir, O. I., Sidor, O. M., Netyaga, V. V.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2009
• Subjects: гетероструктура; p–n-InSe; пленка InS
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.1.61
• Journal Title: Technology and design in electronic equipment

It has been established that during prolonged (120 h) thermal treatment of InSe single crystals in sulfur vapors, an InS/InSe heterostructure is formed. The investigated electrical and photoelectrical characteristics of the obtained structures demonstrated a significant superiority of the anisotype...